HM2300D
HM2300D is N-Channel Enhancement Mode Power MOSFET manufactured by H&M Semiconductor.
Description
The HM2300D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application.
General Features
- VDS = 20V,ID = 6.0A RDS(ON) < 38mΩ @ VGS=2.5V RDS(ON) < 25mΩ @ VGS=4.5V
- High power and current handing capability
- Lead free product is acquired
- Surface mount package
S Schematic diagram
2300D
Marking and pin assignment
Application
- Battery protection
- Load switch
- Power management
SOT-23 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
2300D
SOT-23
Reel Size Ø180mm
Tape width 8 mm
Quantity 3000 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TA =25℃ TA =70℃
Drain...