• Part: HM2300PR
  • Description: N-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: H&M Semiconductor
  • Size: 383.97 KB
Download HM2300PR Datasheet PDF
H&M Semiconductor
HM2300PR
HM2300PR is N-Channel Enhancement Mode Power MOSFET manufactured by H&M Semiconductor.
Description The HM2300PR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. General Features - VDS = 20V,ID = 5.5A RDS(ON) < 40mΩ @ VGS=2.5V RDS(ON) < 33mΩ @ VGS=4.5V - High power and current handing capability - Lead free product is acquired - Surface mount package Application - Battery protection - Load switch - Power management S Schematic diagram Package Marking and Ordering Information Device Marking Device Device Package SOT-89-3L Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA =25℃ TA =70℃ Drain Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range TJ,TSTG Limit 20 ±12 .5 4.4 16.5 1.25 -55 To...