HM2300PR
HM2300PR is N-Channel Enhancement Mode Power MOSFET manufactured by H&M Semiconductor.
Description
The HM2300PR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application.
General Features
- VDS = 20V,ID = 5.5A RDS(ON) < 40mΩ @ VGS=2.5V RDS(ON) < 33mΩ @ VGS=4.5V
- High power and current handing capability
- Lead free product is acquired
- Surface mount package
Application
- Battery protection
- Load switch
- Power management
S Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
SOT-89-3L
Reel Size Ø180mm
Tape width 8 mm
Quantity 3000 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TA =25℃ TA =70℃
Drain Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
20 ±12 .5 4.4 16.5 1.25 -55 To...