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HM2306 Datasheet

N-channel Enhancement Mode Power MOSFET

Manufacturer: H&M Semiconductor

HM2306 Overview

The HM2306 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.

HM2306 Key Features

  • VDS = 30V,ID = 5.8A RDS(ON) < 59mΩ @ VGS=2.5V RDS(ON) < 45mΩ @ VGS=4.5V RDS(ON) < 41mΩ @ VGS=10V
  • High Power and current handing capability
  • Lead free product is acquired
  • Surface Mount Package

More Datasheets from H&M Semiconductor

See all H&M Semiconductor datasheets

Part Number Description
HM2300 N-Channel Enhancement Mode Power MOSFET
HM2300B N-Channel Enhancement Mode Power MOSFET
HM2300C N-Channel Enhancement Mode Power MOSFET
HM2300D N-Channel Enhancement Mode Power MOSFET
HM2300DR N-Channel Enhancement Mode Power MOSFET
HM2300PR N-Channel Enhancement Mode Power MOSFET
HM2301 P-Channel Enhancement Mode Power MOSFET
HM2301A P-Channel Enhancement Mode Power MOSFET
HM2301B P-Channel Trench Power MOSFET
HM2301BJR P-Channel MOSFET

HM2306 Distributor