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HM2306 Datasheet

Manufacturer: H&M Semiconductor
HM2306 datasheet preview

HM2306 Details

Part number HM2306
Datasheet HM2306-HMSemiconductor.pdf
File Size 279.47 KB
Manufacturer H&M Semiconductor
Description N-Channel Enhancement Mode Power MOSFET
HM2306 page 2 HM2306 page 3

HM2306 Overview

The HM2306 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.

HM2306 Key Features

  • VDS = 30V,ID = 5.8A RDS(ON) < 59mΩ @ VGS=2.5V RDS(ON) < 45mΩ @ VGS=4.5V RDS(ON) < 41mΩ @ VGS=10V
  • High Power and current handing capability
  • Lead free product is acquired
  • Surface Mount Package

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