Datasheet Summary
N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The HM2306 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.
GENERAL Features
- VDS = 30V,ID = 5.8A RDS(ON) < 59mΩ @ VGS=2.5V RDS(ON) < 45mΩ @ VGS=4.5V RDS(ON) < 41mΩ @ VGS=10V
- High Power and current handing capability
- Lead free product is acquired
- Surface Mount Package
S Schematic diagram
Marking and pin Assignment
Application
- PWM applications
- Load switch
- Power management
SOT-23 top view
Package Marking And Ordering Information
Device...