Datasheet Summary
P-Channel Enhancement Mode Power MOSFET
Description
The HM2333 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.
General Features
- VDS = -12V,ID = -6A RDS(ON) < 45mΩ @ VGS=-2.5V RDS(ON) < 30mΩ @ VGS=-4.5V
S Schematic diagram
- High power and current handing capability
- Lead free product is acquired
- Surface mount package
Marking and pin assignment
Application
- PWM applications
- Load switch
- Power management
SOT-23-3L top view
Package Marking And Ordering Information
Device Marking
Device
Device...