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HM2333 Datasheet

P-channel Enhancement Mode Power MOSFET

Manufacturer: H&M Semiconductor

HM2333 Overview

The HM2333 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.

HM2333 Key Features

  • VDS = -12V,ID = -6A RDS(ON) < 45mΩ @ VGS=-2.5V RDS(ON) < 30mΩ @ VGS=-4.5V
  • High power and current handing capability
  • Lead free product is acquired
  • Surface mount package

HM2333 Distributor