• Part: HM2N10
  • Description: N-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: H&M Semiconductor
  • Size: 275.30 KB
Download HM2N10 Datasheet PDF
H&M Semiconductor
HM2N10
Description The +01 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features - VDS = 100V,ID = 2A RDS(ON) <240mΩ @ VGS=10V (Typ:210mΩ) - High density cell design for ultra low Rdson - Fully characterized avalanche voltage and current - Excellent package for good heat dissipation Application - Power switching application - Hard switched and high frequency circuits - Uninterruptible power supply +01 S Schematic diagram TO-92 view Package Marking and Ordering Information Device Marking Device Device Package 0102Z +01 TO-92 Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed (Note 1) ID IDM Maximum Power Dissipation Operating Junction and...