HM2N15PR Overview
The HM2N15PR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
HM2N15PR Key Features
- VDS = 150V,ID = 2A RDS(ON) < 300mΩ @ VGS=10V (Typ:260mΩ)
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Excellent package for good heat dissipation
- Power switching application
- Hard switched and high frequency circuits