HM35N03Q Datasheet | H&M Semiconductor

Description The HM35N03Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features - VDS =30V,ID =35A RDS(ON) < 5.5mΩ @ VGS=10V RDS(ON) < 9.5mΩ @ VGS=4.5V - High density cell design for ultra low Rdson - Fully characterized avalanche voltage and current - Good stability and uniformity with high EAS - Excellent package for good heat dissipation - Special process technology for high ESD capability Application - Secondary side synchronous rectifier - High side switch in POL DC/DC converter 100% UIS TESTED! Schematic diagram DFN 3x3 EP top view Package Marking and Ordering Information Device Marking Device Device Package DFN 3x3 EP Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Pulsed Drain Current Maximum Power Dissipation Derating factor Single pulse avalanche energy (Note 5) Operating Junction and Storage Temperature...