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HM35P06

Manufacturer: H&M Semiconductor

HM35P06 datasheet by H&M Semiconductor.

HM35P06 datasheet preview

HM35P06 Datasheet Details

Part number HM35P06
Datasheet HM35P06-HMSemiconductor.pdf
File Size 738.75 KB
Manufacturer H&M Semiconductor
Description P-Channel Enhancement Mode Power MOSFET
HM35P06 page 2 HM35P06 page 3

HM35P06 Overview

The HM35P06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications.

HM35P06 Key Features

  • VDS =-60V,ID =-35A RDS(ON) <32mΩ @ VGS=-10V
  • High density cell design for ultra low Rdson
  • Fully characterized avalanche voltage and current
  • Good stability and uniformity with high EAS
  • Excellent package for good heat dissipation
  • High side switch for full bridge converter
  • DC/DC converter for LCD display
  • Tape width
  • Quantity
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HM35P06 Distributor

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