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HM35P06K

Manufacturer: H&M Semiconductor

HM35P06K datasheet by H&M Semiconductor.

HM35P06K datasheet preview

HM35P06K Datasheet Details

Part number HM35P06K
Datasheet HM35P06K-HMSemiconductor.pdf
File Size 394.62 KB
Manufacturer H&M Semiconductor
Description P-Channel Enhancement Mode Power MOSFET
HM35P06K page 2 HM35P06K page 3

HM35P06K Overview

The HM35P06K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications.

HM35P06K Key Features

  • VDS =-60V,ID =-35A RDS(ON) <32mΩ @ VGS=-10V
  • High density cell design for ultra low Rdson
  • Fully characterized avalanche voltage and current
  • Good stability and uniformity with high EAS
  • Excellent package for good heat dissipation
  • High side switch for full bridge converter
  • DC/DC converter for LCD display
  • Tape width
  • Quantity
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HM35P06K Distributor

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