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HM3710 Datasheet

Manufacturer: H&M Semiconductor
HM3710 datasheet preview

HM3710 Details

Part number HM3710
Datasheet HM3710-HMSemiconductor.pdf
File Size 438.65 KB
Manufacturer H&M Semiconductor
Description N-Channel Enhancement Mode Power MOSFET
HM3710 page 2 HM3710 page 3

HM3710 Overview

The +0 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

HM3710 Key Features

  • VDS = 100V,ID =57A RDS(ON) < 16mΩ @ VGS=10V (Typ:12mΩ)
  • Special process technology for high ESD capability
  • High density cell design for ultra low Rdson
  • Fully characterized Avalanche voltage and current
  • Good stability and uniformity with high EAS
  • Excellent package for good heat dissipation
  • Power switching application
  • Hard Switched and High Frequency Circuits
  • Uninterruptible Power Supply
  • Tape width

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