• Part: HM3710K
  • Description: N-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: H&M Semiconductor
  • Size: 613.60 KB
Download HM3710K Datasheet PDF
H&M Semiconductor
HM3710K
DESCRIPTION The HM3710K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES - VDS = 100V,ID =57A RDS(ON) < 16mΩ @ VGS=10V (Typ:12mΩ) Sc hematic diagram - Special process technology for high ESD capability - High density cell design for ultra low Rdson - Fully characterized Avalanche voltage and current - Good stability and uniformity with high EAS - Excellent package for good heat dissipation Application - Power switching application - Hard Switched and High Frequency Circuits - Uninterruptible Power Supply Marking and pin assignment 100% UIS TESTED! 100% ΔVds TESTED! TO-252-2L top view Package Marking And Ordering Information Device Marking Device Device Package TO-252-2L Reel Size Tape width Quantity Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source...