HM3N80F Overview
： VDSS 800 HM3N80F, the silicon N-channel Enhanced VDMOSFETs, is ID 3 obtained by the self-aligned planar Technology which reduce the PD(TC=25℃) 75 conduction loss, improve switching performance and enhance RDS(ON)Typ 4.0 the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the RoHS...