HM3N80K
Description
：
VDSS
HM3N80K, the silicon N-channel Enhanced VDMOSFETs, is
3 obtained by the self-aligned planar Technology which reduce the
PD(TC=25℃)
75 conduction loss, improve switching performance and enhance
RDS(ON)Typ
4.0 the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and
TO-/ higher efficiency. The package form is TO-252, which accords with the Ro HS standard.
Features
： l Fast Switching l Low ON Resistance(Rdson≤4.8Ω) l Low Gate Charge (Typical Data:18n C) l Low Reverse transfer capacitances(Typical:7p F) l 100% Single Pulse avalanche energy Test
Applications：
Automotive、DC Motor Control and Class D Amplifier.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
Rating
VDSS
IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3
TJ，Tstg TL
Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pulse Avalanche...
