HM40N04K Datasheet | H&M Semiconductor

DESCRIPTION The HM40N04K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES - VDS =40V,ID =40A RDS(ON) < 24mΩ @ VGS=10V RDS(ON) < 35mΩ @ VGS=4.5V - High density cell design for ultra low Rdson - Fully characterized Avalanche voltage and current Application - Power switching application - Hard Switched and High Frequency Circuits - Uninterruptible Power Supply Schematic diagram HM40N04K Package Marking And Ordering Information Device Marking Device Device Package TO-252-2L Reel Size Ø330mm Tape width 12mm Quantity 2500 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Continuous(TA=100℃) ID (100℃) Pulsed Drain Current Maximum Power Dissipation Operating Junction and Storage Temperature Range IDM PD TJ,TSTG Limit 40 ±20 40 28 160 40 -55 To 150 Unit V V A A A W ℃ Thermal Characteristic Thermal Resistance,Junction-to-Ambient(Note...