Datasheet4U Logo Datasheet4U.com

HM40N06D Datasheet N-channel Enhancement Mode Power MOSFET

Manufacturer: H&M Semiconductor

Overview: HM40N06D N-Channel Enhancement Mode Power MOSFET.

General Description

The HM40N06D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

General

Key Features

  • VDS =60V,ID =40A RDS(ON) < 11.5mΩ @ VGS=10V (Typ:9.1mΩ).
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation.
  • Special process technology for high ESD capability Schematic diagram.

More Datasheets from H&M Semiconductor

Part Number Description
HM40N04D N-Channel Enhancement Mode Power MOSFET
HM40N04K N-Channel Enhancement Mode Power MOSFET
HM40N120FT 1200V 40A IGBT
HM40N15KA N-Channel Enhancement Mode Power MOSFET
HM40N20D N-Channel Enhancement Mode Power MOSFET
HM40N25 250V N-Channel MOSFET
HM40N25F 250V N-Channel MOSFET
HM40DN04K Dual N-Channel Enhancement Mode Power MOSFET
HM40P03Q P-Channel Enhancement Mode Power MOSFET
HM40SDN02Q Dual Asymmetric N-Channel Enhancement Mode MOSFET

HM40N06D Distributor