HM40N06D
HM40N06D is N-Channel Enhancement Mode Power MOSFET manufactured by H&M Semiconductor.
Description
The HM40N06D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
- VDS =60V,ID =40A RDS(ON) < 11.5mΩ @ VGS=10V
(Typ:9.1mΩ)
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Special process technology for high ESD capability
Schematic diagram
Application
- Power switching application
- Hard switched and high frequency circuits
- Uninterruptible Power Supply
Marking and pin assignment
100% UIS TESTED!
100% ΔVds TESTED!
Package Marking and Ordering Information
Device Marking
Device
Device Package
DFN5X6-8L
Reel Size
- Tape width
- Quantity
- Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous Drain Current-Continuous(TC=100℃) Pulsed Drain Current Maximum Power Dissipation Derating factor
ID (100℃)
IDM PD
Single pulse avalanche energy (Note 5)
Operating Junction and Storage Temperature...
