HM40N15KA
HM40N15KA is N-Channel Enhancement Mode Power MOSFET manufactured by H&M Semiconductor.
Description
The +01.$ uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
- VDS =150V,ID =40A RDS(ON) < 45mΩ @ VGS=10V
(Typ:35mΩ)
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Special process technology for high ESD capability
Schematic diagram +01.$
Application
- Power switching application
- Hard switched and high frequency circuits
- Uninterruptible power supply
Marking and pin assignment
100% UIS TESTED! 100% ∆Vds TESTED!
TO-252-2L top view
Package Marking and Ordering Information
Device Marking +01.$
Device +01.$
Device Package TO-252-2L
Reel Size
- Tape width
- Quantity
- Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Drain-Source Voltage
Parameter
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Continuous(TC=100℃) Pulsed Drain Current
Maximum Power Dissipation
Derating factor Single pulse avalanche energy (Note 5)
Operating Junction and Storage Temperature Range
Symbol VDS VGS ID
ID (100℃)
IDM PD
TJ,TSTG
Limit...
