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HM4302 Datasheet

N-channel Enhancement Mode Power MOSFET

Manufacturer: H&M Semiconductor

HM4302 Overview

The+0 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

HM4302 Key Features

  • VDS =30V,ID =A RDS(ON) < mΩ @ VGS=10V RDS(ON) < mΩ @ VGS=5V
  • High density cell design for ultra low Rdson
  • Fully characterized Avalanche voltage and current
  • Power switching application
  • Hard Switched and High Frequency Circuits
  • Uninterruptible Power Supply

More Datasheets from H&M Semiconductor

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