• Part: HM4302B
  • Description: N-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: H&M Semiconductor
  • Size: 452.38 KB
Download HM4302B Datasheet PDF
H&M Semiconductor
HM4302B
DESCRIPTION The HM4302B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES - VDS =30V,ID =25A RDS(ON) < 5.5mΩ @ VGS=10V RDS(ON) < 7.0mΩ @ VGS=5V - High density cell design for ultra low Rdson - Fully characterized Avalanche voltage and current Application - Power switching application - Hard Switched and High Frequency Circuits - Uninterruptible Power Supply Schematic diagram HM4302B Marking and pin Assignment SOP-8 top view Package Marking And Ordering Information Device Marking Device Device Package SOP-8 Reel Size Ø330mm Tape width 12mm Quantity 2500 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Drain-Source Voltage Parameter Symbol VDS Gate-Source Voltage Drain Current-Continuous Drain Current-Continuous(TA=100℃) ID (100℃) Pulsed Drain...