• Part: HM4402E
  • Description: N-Channel Enhancement Mode Power MOSFET
  • Manufacturer: H&M Semiconductor
  • Size: 381.50 KB
Download HM4402E Datasheet PDF
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Datasheet Summary

Description The HM4402E uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features - VDS =20V,ID =14A RDS(ON) <7 mΩ @ VGS=4.5V RDS(ON) <9 mΩ @ VGS=2.5V ESD Rating: 2000V HBM - High power and current handing capability - Lead free product is acquired - Surface mount package Application - PWM application - Load switch Schematic diagram Marking and pin Assignment SOP-8 top view Package Marking and Ordering Information Device Marking Device Device Package SOP-8 Reel Size Ø330mm Tape width 12mm Quantity 2500...