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HM4402E Datasheet N-channel Enhancement Mode Power MOSFET

Manufacturer: H&M Semiconductor

Overview: Description The HM4402E uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

General Description

The HM4402E uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

General

Key Features

  • VDS =20V,ID =14A RDS(ON).

HM4402E Distributor