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HM4490 Datasheet

N-channel Enhancement Mode Power MOSFET

Manufacturer: H&M Semiconductor

HM4490 Overview

The HM4490 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

HM4490 Key Features

  • VDS =200V,ID =3.9A
  • High density cell design for ultra low Rdson
  • Fully characterized avalanche voltage and current
  • Low gate to drain charge to reduce switching losses
  • Power switching application
  • Hard switched and high frequency circuits
  • Uninterruptible power supply

More Datasheets from H&M Semiconductor

See all H&M Semiconductor datasheets

Part Number Description
HM4490B N-Channel Enhancement Mode Power MOSFET
HM4402A N-Channel Enhancement Mode Power MOSFET
HM4402B N-Channel Enhancement Mode Power MOSFET
HM4402C N-Channel Enhancement Mode Power MOSFET
HM4402D N-Channel Enhancement Mode Power MOSFET
HM4402E N-Channel Enhancement Mode Power MOSFET
HM4404 Fast Boost Charge Buck Regulator
HM4406A N-Channel Enhancement Mode Power MOSFET
HM4407 P-Channel Enhancement Mode Power MOSFET
HM4407A P-Channel Enhancement Mode Power MOSFET

HM4490 Distributor