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HM4490 Datasheet

Manufacturer: H&M Semiconductor
HM4490 datasheet preview

HM4490 Details

Part number HM4490
Datasheet HM4490-HMSemiconductor.pdf
File Size 506.41 KB
Manufacturer H&M Semiconductor
Description N-Channel Enhancement Mode Power MOSFET
HM4490 page 2 HM4490 page 3

HM4490 Overview

The HM4490 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

HM4490 Key Features

  • VDS =200V,ID =3.9A
  • High density cell design for ultra low Rdson
  • Fully characterized avalanche voltage and current
  • Low gate to drain charge to reduce switching losses
  • Power switching application
  • Hard switched and high frequency circuits
  • Uninterruptible power supply

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