Datasheet Summary
N-Channel Enhancement Mode Power MOSFET
Description
The HM4490B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
- VDS =200V,ID =2A
RDS(ON) < 79mΩ @ VGS=10V
（Typ：580mΩ）
Schematic diagram
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Low gate to drain charge to reduce switching losses
Application
- Power switching application
- Hard switched and high frequency circuits
- Uninterruptible power supply
Marking and pin assignment
100% ∆Vds TESTED!
SOP-8 top view
Package Marking and Ordering Information
Devi...