HM4490B
Overview
The HM4490B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
- VDS =200V,ID =2A RDS(ON) < 79mΩ @ VGS=10V （Typ：580mΩ） Schematic diagram
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Low gate to drain charge to reduce switching losses
