HM4490B Description
The HM4490B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
HM4490B Key Features
- VDS =200V,ID =2A
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Low gate to drain charge to reduce switching losses
- Power switching application
- Hard switched and high frequency circuits
- Uninterruptible power supply