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HM4887 Datasheet

Dual P-channel Enhancement Mode Power MOSFET

Manufacturer: H&M Semiconductor

HM4887 datasheet preview

Datasheet Details

Part number	HM4887
Manufacturer	H&M Semiconductor
File Size	505.22 KB
Description	Dual P-Channel Enhancement Mode Power MOSFET
Datasheet	HM4887-HMSemiconductor.pdf

HM4887 Overview

The HM4887 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

HM4887 Key Features

VDS =-100V,ID =-4.5A RDS(ON) <100mΩ @ VGS=-10V
Super high dense cell design
Advanced trench process technology
Reliable and rugged
High density cell design for ultra low On-Resistance
Power management in notebook puter
Portable equipment and battery powered systems
Tape width
Quantity

More Datasheets from H&M Semiconductor

See all H&M Semiconductor datasheets

Part Number	Description
HM4803	Dual P-Channel Enhancement Mode Power MOSFET
HM4805	Dual P-Channel Enhancement Mode Power MOSFET
HM4805A	Dual P-Channel Enhancement Mode Power MOSFET
HM4805B	Dual P-Channel Enhancement Mode Power MOSFET
HM4806B	Dual N-Channel Enhancement Mode Power MOSFET
HM4806D	Dual N-Channel Enhancement Mode Power MOSFET
HM4812	Dual N-Channel Enhancement Mode Power MOSFET
HM4813	Dual P-Channel Enhancement Mode Power MOSFET
HM4821	Dual P-Channel Enhancement Mode Power MOSFET
HM4822B	Dual N-Channel Enhancement Mode Power MOSFET

HM4887 Distributor