• Part: HM4887
  • Description: Dual P-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: H&M Semiconductor
  • Size: 505.22 KB
HM4887 Datasheet (PDF) Download
H&M Semiconductor
HM4887

Description

The HM4887 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Key Features

  • VDS =-100V,ID =-4.5A RDS(ON) <100mΩ @ VGS=-10V (Typ:85mΩ) S1 S2 - Super high dense cell design
  • Advanced trench process technology
  • Reliable and rugged
  • High density cell design for ultra low On-Resistance
HM4887 datasheet preview

Datasheets by Manufacturer

Part Number Manufacturer Description
HM4885 H&M Semiconductor Dual P-Channel Enhancement Mode Power MOSFET
HM4885A H&M Semiconductor Dual P-Channel Enhancement Mode Power MOSFET
HM4886E H&M Semiconductor Dual N-Channel MOSFET
HM4884 H&M Semiconductor Dual N-Channel MOSFET
HM4886A H&M Semiconductor N-Channel Enhancement Mode Power MOSFET