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HM4887 Datasheet

Manufacturer: H&M Semiconductor
HM4887 datasheet preview

HM4887 Details

Part number HM4887
Datasheet HM4887-HMSemiconductor.pdf
File Size 505.22 KB
Manufacturer H&M Semiconductor
Description Dual P-Channel Enhancement Mode Power MOSFET
HM4887 page 2 HM4887 page 3

HM4887 Overview

The HM4887 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

HM4887 Key Features

  • VDS =-100V,ID =-4.5A RDS(ON) <100mΩ @ VGS=-10V
  • Super high dense cell design
  • Advanced trench process technology
  • Reliable and rugged
  • High density cell design for ultra low On-Resistance
  • Power management in notebook puter
  • Portable equipment and battery powered systems
  • Tape width
  • Quantity

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