HM4924B Datasheet | H&M Semiconductor

40V Full-Bridge of MOSFET Description The HM% uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The plementary MOSFETs may be used to form a H-Bridge, and for a host of other applications. General Features - N-channel： VDS =40V,ID =10A RDS(ON)=22mΩ (typical) @ VGS=4.5V RDS(ON)=17mΩ (typical) @ VGS=10V P-Channel： VDS =-40V,ID =-6A RDS(ON)=65mΩ (typical) @ VGS=-4.5V RDS(ON)=45mΩ (typical) @ VGS=-10V - Excellent gate charge x RDS(ON) product(FOM) - Very low on-resistance RDS(ON) - 150 °C operating temperature - Pb-free lead plating - 100% UIS tested Application - plementary MOSFET for DC FAN, Motor - Wireless Charging Package - SOP-8 HM% Schematic diagram N-channel P-channel GN1 D1 GP1 GN2 D2 GP2 N-channel P-channel Marking and pin assignment GP2 SP GP1 D1 D2 GN2 SN - 1 Ordering Information Part Number HM%SR...