HM4926 Datasheet | H&M Semiconductor

60V Full-Bridge of MOSFET Description The HM4926 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The plementary MOSFETs may be used to form a H-Bridge, and for a host of other applications. General Features - N-channel： VDS =60V,ID =5A RDS(ON)=46mΩ (typical) @ VGS=4.5V RDS(ON)=34mΩ (typical) @ VGS=10V P-Channel： VDS =-60V,ID =-5A RDS(ON)=135mΩ (typical) @ VGS=-4.5V RDS(ON)=85mΩ (typical) @ VGS=-10V - Excellent gate charge x RDS(ON) product(FOM) - Very low on-resistance RDS(ON) - 150 °C operating temperature - Pb-free lead plating - 100% UIS tested Application - plementary MOSFET for DC FAN, Motor - Wireless Charging Package - SOP-8 Schematic diagram N-channel P-channel GN1 D1 GP1 GN2 D2 GP2 N-channel P-channel Marking and pin assignment Ordering Information Part Number HM4926SR HM4926SF Storage Temperature -55°C to +150°C -55°C to +150°C Package SOP-8 SOP-8 Devices Per Reel 3000...