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HM4926 Datasheet 60v Full-bridge Of MOSFET

Manufacturer: H&M Semiconductor

Overview: 60V Full-Bridge of MOSFET.

General Description

The HM4926 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .

The plementary MOSFETs may be used to form a H-Bridge, and for a host of other applications.

General

Key Features

  • N-channel： VDS =60V,ID =5A RDS(ON)=46mΩ (typical) @ VGS=4.5V RDS(ON)=34mΩ (typical) @ VGS=10V P-Channel： VDS =-60V,ID =-5A RDS(ON)=135mΩ (typical) @ VGS=-4.5V RDS(ON)=85mΩ (typical) @ VGS=-10V.
  • Excellent gate charge x RDS(ON) product(FOM).
  • Very low on-resistance RDS(ON).
  • 150 °C operating temperature.
  • Pb-free lead plating.
  • 100% UIS tested.

More Datasheets from H&M Semiconductor

Part Number Description
HM4922 20V Full-Bridge of MOSFET
HM4923 30V Full-Bridge of MOSFET
HM4924 40V Full-Bridge of MOSFET
HM4924B 40V Full-Bridge of MOSFET
HM491C PFM boost DC-DC converter
HM4953 Dual P-Channel Enhancement Mode Power MOSFET
HM4953A Dual P-Channel Enhancement Mode Power MOSFET
HM4953B Dual P-Channel Enhancement Mode Power MOSFET
HM4953C Dual P-Channel Enhancement Mode Power MOSFET
HM4953D P-Channel Enhancement Mode Power MOSFET

HM4926 Distributor