• Part: HM4P10PR
  • Description: -100V P-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: H&M Semiconductor
  • Size: 1.03 MB
Download HM4P10PR Datasheet PDF
H&M Semiconductor
HM4P10PR
Description The HM4P10PR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -100V ID =-4.0 A RDS(ON) < 210mΩ @ VGS=10V Application Battery protection Load switch Uninterruptible power supply HM4P10PR SOT-89-3L top view Package Marking and Ordering Information Product ID Pack Marking 627-3L Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ -10V1 Continuous Drain Current, VGS @ -10V1 Pulsed Drain Current2 Total Power Dissipation3 TSTG Storage Temperature Range TJ RθJA RθJC Operating Junction Temperature Range Thermal Resistance Junction-ambient 1 Thermal Resistance Junction-Case1 Qty(PCS) 3000 Rating -100 ±20 -4.0 -2.8 -12...