HM4P10R Description
The HM4P10R uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.
- Part: HM4P10R
- Manufacturer: H&M Semiconductor (official site)
- Size: 1.13 MB
Related H&M Semiconductor Datasheets
| Part Number | Description |
|---|---|
| HM4P10PR | -100V P-Channel Enhancement Mode MOSFET |
| HM4P15Q | P-Channel Enhancement Mode Power MOSFET |
| HM4P20K | P-Channel Enhancement Mode Power MOSFET |
| HM40DN04K | Dual N-Channel Enhancement Mode Power MOSFET |
| HM40N04D | N-Channel Enhancement Mode Power MOSFET |