HM50N10K
Overview
The HM50N10K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
- VDS = 100V,ID =50A RDS(ON) < 23mΩ @ VGS=10V (Typ:14mΩ) Schematic diagram
- Special process technology for high ESD capability
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation HM50N10K
