HM50N20 Datasheet | H&M Semiconductor

N-Channel Enhancement Mode Power MOSFET Description The HM50N20 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features - VDS =200V,ID =50A RDS(ON) < 40mΩ @ VGS=10V (Typ:30mΩ) - High density cell design for ultra low Rdson - Fully characterized avalanche voltage and current - Good stability and uniformity with high EAS - Excellent package for good heat dissipation - Special process technology for high ESD capability Application - Power switching application - Hard switched and high frequency circuits - Uninterruptible power supply Schematic diagram HM50N20 Marking and...