HM50P03D Datasheet | H&M Semiconductor

P-Channel Enhancement Mode Power MOSFET Description The HM50P03D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features - VDS =-30V,ID =-50A RDS(ON) < 7mΩ @ VGS=-10V - High density cell design for ultra low Rdson - Fully characterized avalanche voltage and current - Good stability and uniformity with high EAS - Excellent package for good heat dissipation - Special process technology for high ESD capability Application - Battery and loading switching S Schematic diagram Marking and pin assignment 100% UIS TESTED! Package Marking and Ordering Information Device...