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HM50P06

Manufacturer: H&M Semiconductor

HM50P06 datasheet by H&M Semiconductor.

HM50P06 datasheet preview

HM50P06 Datasheet Details

Part number HM50P06
Datasheet HM50P06-HMSemiconductor.pdf
File Size 423.18 KB
Manufacturer H&M Semiconductor
Description P-Channel Enhancement Mode Power MOSFET
HM50P06 page 2 HM50P06 page 3

HM50P06 Overview

The +03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications.

HM50P06 Key Features

  • VDS =-60V,ID =-50A RDS(ON) <28mΩ @ VGS=-10V
  • High density cell design for ultra low Rdson
  • Fully characterized avalanche voltage and current
  • Good stability and uniformity with high EAS
  • Excellent package for good heat dissipation
  • Load switch
  • Tape width
  • Quantity
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HM50P06 Distributor

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