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HM5N60I Datasheet 600v N-channel MOSFET

Manufacturer: H&M Semiconductor

Overview: HM5N60K / HM5N60I HM5N60K / HM5N60I 600V N-Channel MOSFET General.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.

These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.

Key Features

  • 4.5A, 600V, RDS(on) = 2.50Ω @VGS = 10 V.
  • Low gate charge ( typical 16nC).
  • High ruggedness.
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability {D.
  • TO-252 TO-251 ◀▲ {G.
  • {S Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Vo.

More Datasheets from H&M Semiconductor

Part Number Description
HM5N60 600V N-Channel MOSFET
HM5N60F 600V N-Channel MOSFET
HM5N60K 600V N-Channel MOSFET
HM5N65 650V N-Channel MOSFET
HM5N65F 650V N-Channel MOSFET
HM5N06APR N-Channel Enhancement Mode Power MOSFET
HM5N06AR N-Channel Enhancement Mode Power MOSFET
HM5N06R N-Channel Enhancement Mode Power MOSFET
HM5N15Q MOSFET
HM5N20R N-Channel Enhancement Mode Power MOSFET

HM5N60I Distributor