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HM5N65 Datasheet 650v N-channel MOSFET

Manufacturer: H&M Semiconductor

Overview: +01 / +01) +01 / +01) 650V N-Channel MOSFET General.

General Description

This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology.

This advanced technology has been espe cially tailored to minimize o n-state r esistance, pr ovide superior switching performance, and withstand high ener gy pulse in the avalanche and mutation mode.

These devices are well suited for low vo ltage ap plications su ch as DC/DC converters a nd hig h efficiency switching for power management in portable and battery operated products.

Key Features

  • 4.5A, 650V, RDS(on) = 3.0 @VGS = 10 V.
  • Low gate charge ( typical 15nC).
  • High ruggedness.
  • Fast wsitching.
  • 100% avalanche tested.
  • Improved dv/dt capability Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter+01+01)8QLWV VDSS Drain-Source Voltage 650 V ID Drain Current - Continuous (TC = 25°C) 4.5 4.5.
  • A - Continuous (TC = 100°C.

More Datasheets from H&M Semiconductor

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HM5N65 Distributor