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HM6801 Datasheet

Dual P-channel Enhancement Mode Power MOSFET

Manufacturer: H&M Semiconductor

HM6801 Overview

The HM6801 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.

HM6801 Key Features

  • VDS = -30V,ID = -2.5A RDS(ON) < 130mΩ @ VGS=-10V RDS(ON) < 180mΩ @ VGS=-4.5V
  • High Power and current handing capability
  • Lead free product is acquired
  • Surface Mount Package

HM6801 Distributor