• Part: HM6803
  • Description: Dual P-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: H&M Semiconductor
  • Size: 694.97 KB
Download HM6803 Datasheet PDF
H&M Semiconductor
HM6803
DESCRIPTION The HM6803 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES - VDS = -20V,ID = -3A RDS(ON) < 140mΩ @ VGS=-2.5V RDS(ON) < 110mΩ @ VGS=-4.5V DD GG SS Schematic diagram G1 1 S2 2 6 5 D1 S1 - High Power and current handing capability - Lead free product is acquired - Surface Mount Package G2 3 4 D2 Marking and pin Assignment Application - PWM applications - Load switch - Power management SOT23-6L top view Package Marking And Ordering Information Device Marking Device Device Package SOT-23-6L Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain...