HM7000 Datasheet | H&M Semiconductor

FEATURE z High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability MARKING APPLICATION z Load Switch for Portable Devices z DC/DC Converter Equivalent Circuit MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Continuous Drain Current Power Dissipation Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature Symbol VDS ID PD RθJA TJ Tstg Value 60 0.2 0.625 200 150 -55 ~+150 Unit V A W ℃/W ℃ MOSFET ELECTRICAL CHARACTERISTICS Ta=25 ℃ unless otherwise specified Parameter Symbol Test conditions Drain-Source Breakdown Voltage Gate-Threshold Voltage- Gate-body Leakage Zero Gate Voltage Drain Current On-state Drain Current V(BR)DSS V(GS)th l GSS IDSS ID(ON) Drain-Source On-Resistance- RDS(on) Forward Trans conductance- gfs Drain-source on-voltage- VDS(on) Input Capacitance - - Output Capacitance - - Reverse Transfer Capacitance - - Turn-on Time - - Turn-off Time - - Ciss Coss Crss td(on) td(off) - Pulse test - - These parameters have no way to verify. VGS=0 V, ID=10μA VDS=VGS, ID=1m A VDS=0 V, VGS=±15 V VDS=60 V, VGS=0 V VGS=4.5 V, VDS=10 V VGS=4.5V, ID=75m A VGS=10V, ID=500m A VDS=10 V, ID=200m A VGS=10V, ID=500m A VGS=4.5V, ID=75m A VDS=25V, VGS=0V, f=1MHz VDD=15 V, RL=30Ω ID=500m A,VGEN=10 V RG=25 Ω Min Typ Max Unit ±10 n...