HM8N65F
Description
This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology. This advanced technology has been espe cially tailored to minimize o n-state r esistance, pr ovide superior switching performance, and withstand high ener gy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency sw itched mode power supp lies, active power factor corr ection based on half br idge topology.
Features
- 7.5A, 650V, RDS(on) = 1.20Ω (typical) @VGS = 10 V
- Low gate charge ( typical 29n C)
- High ruggedness
- Fast wsitching
- 100% avalanche tested
- Improved dv/dt capability
{D
TO-220
GD S
TO-220F
- ◀▲
{G
- -
{S
Absolute Maximum Ratings TC = 25°Cunless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current
- Pulsed
(Note 1)
VGSS
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche...
