HM8N65K Overview
This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology. This advanced technology has been espe cially tailored to minimize o n-state r esistance, pr ovide superior switching performance, and withstand high ener gy pulse in the avalanche and mutation mode. These devices are well suited for low vo ltage ap plications su ch as DC/DC converters a nd hig h efficiency switching for power...
HM8N65K Key Features
- 8.0A, 650V, RDS(on) = 1.26 @VGS = 10 V
- Low gate charge ( typical 15nC)
- High ruggedness
- Fast wsitching
- 100% avalanche tested
- Improved dv/dt capability