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HMS18N10D Datasheet N-channel Enhancement Mode Power MOSFET

Manufacturer: H&M Semiconductor

HMS18N10D Overview

The HMS18N10D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of

HMS18N10D Key Features

  • High density cell design for ultra low Rdson - Fully characterized avalanche voltage and current - Good stability and un
  • Power switching application - Hard switched and high frequency circuits

HMS18N10D Applications

  • High density cell design for ultra low Rdson - Fully characterized avalanche voltage and current - Good stability and un
  • Power switching application - Hard switched and high frequency circuits

HMS18N10D Distributor