HMS18N10Q Overview
The HMS18N10Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of
HMS18N10Q Key Features
- VDS =100V,ID =18A RDS(ON) < mΩ @ VGS=10V (Typ:75mΩ) RDS(ON) < mΩ @ VGS=4.5V (Typ:80mΩ)
- High density cell design for ultra low Rdson - Fully characterized avalanche voltage and current - Good stability and un
- Power switching application - Hard switched and high frequency circuits
HMS18N10Q Applications
- VDS =100V,ID =18A RDS(ON) < mΩ @ VGS=10V (Typ:75mΩ) RDS(ON) < mΩ @ VGS=4.5V (Typ:80mΩ)
- High density cell design for ultra low Rdson - Fully characterized avalanche voltage and current - Good stability and un
- Power switching application - Hard switched and high frequency circuits