HMS18N10Q
Description
The HMS18N10Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
- VDS =100V,ID =18A RDS(ON) < mΩ @ VGS=10V (Typ:75mΩ) RDS(ON) < mΩ @ VGS=4.5V (Typ:80mΩ)
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Special process technology for high ESD capability
Application
- Power switching application
- Hard switched and high frequency circuits
Schematic diagram Marking and pin assignment
100% UIS TESTED! 100% ∆Vds TESTED!
Package Marking and Ordering Information
Device Marking
Device
Device Package
DFN3X3-8L
Reel Size
Tape width
Quantity
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous...
