• Part: HMS3N70F
  • Description: 700V N-Channel Super Junction MOSFET
  • Category: MOSFET
  • Manufacturer: H&M Semiconductor
  • Size: 397.03 KB
Download HMS3N70F Datasheet PDF
H&M Semiconductor
HMS3N70F
Features - Very Low FOM (RDS(on) X Qg) - Extremely low switching loss - Excellent stability and uniformity - 100% Avalanche Tested - Built-in ESD Diode Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 700 3.0 1.5 9.3 Unit V A Ω n C Application - Switch Mode Power Supply (SMPS) - Uninterruptible Power Supply (UPS) - Power Factor Correction (PFC) - TV power & LED Lighting Power - AC to DC Converters - Tele Package & Internal Circuit TO-220FS SYMBOL Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol VDSS VGS IDM1) EAS2) IAR dv/dt dv/dt PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) Drain Current - Pulsed Single Pulsed Avalanche Energy Avalanche Current MOSFET dv/dt ruggedness, VDS=0…400V Reverse diode dv/dt, VDS=0…400V, IDS≤ID Power Dissipation (TC = 25℃) Operating and Storage Temperature...