HMS3N70R2
Features
Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Built-in ESD Diode
Application
Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) TV Power & LED Lighting Power
Key Parameters
Parameter BVDSS @Tj,max
ID RDS(on), max
Qg, Typ
Value 750 3 1.5 5.5
Unit V A Ω n C
Package & Internal Circuit
SOT-223-2L
Absolute Maximum Ratings TJ=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS VGS
IDM EAS dv/dt dv/dt PD VESD(G-S) TJ, TSTG
Drain-Source Voltage
Gate-Source Voltage
Drain Current Drain Current Drain Current
- Continuous (TC = 25℃)
- Continuous (TC = 100℃)
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
MOSFET dv/dt ruggedness, VDS=0…560V Reverse diode dv/dt, VDS=0…560V, IDS≤ID Power Dissipation (TC = 25℃) Gate source ESD(HBM-C=100p F, R=1.5KΩ)
Operating and Storage Temperature Range
700 ±20 3.0
- 2.1
- 9.0
- 43...
