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HM8810E Datasheet Dual N-channel Enhancement Mode Power MOSFET

Manufacturer: H&M Semiconductor

Overview: HM8810E Dual N-Channel Enhancement Mode Power MOSFET.

General Description

The HM8810E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications .It is ESD protested.

General

Key Features

  • VDS = 20V,ID =7A RDS(ON) < 27mΩ @ VGS=2.5V RDS(ON) < 21mΩ @ VGS=4.5V ESD Rating: 2000V HBM.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package Schematic diagram 8810 Marking and pin Assignment Marking and pin Assignment.

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HM8810E Distributor