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HM8810E

Manufacturer: H&M Semiconductor

HM8810E datasheet by H&M Semiconductor.

HM8810E datasheet preview

HM8810E Datasheet Details

Part number HM8810E
Datasheet HM8810E-HMsemi.pdf
File Size 673.17 KB
Manufacturer H&M Semiconductor
Description Dual N-Channel Enhancement Mode Power MOSFET
HM8810E page 2 HM8810E page 3

HM8810E Overview

The HM8810E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested.

HM8810E Key Features

  • VDS = 20V,ID =7A RDS(ON) < 27mΩ @ VGS=2.5V RDS(ON) < 21mΩ @ VGS=4.5V ESD Rating: 2000V HBM
  • High Power and current handing capability
  • Lead free product is acquired
  • Surface Mount Package
  • PWM application -Load switch

HM8810A from other manufacturers

View HM8810A datasheet index

Brand Logo Part Number Description Other Manufacturers
VBsemi Logo HM8810A Dual N-Channel MOSFET VBsemi
H&M Semiconductor logo - Manufacturer

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HM8810E Distributor

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