HM1404B Description
pulse width ≦ 300ns, duty cycle ≦ 2%. Guaranteed by design, not subject to production testing. Unit V 100 1 uA 3V ±100 nA 4 mΩ 1.3 V ns nC Ω pF ns nC +0% 40VDS／±20VGS／130A(ID) N-Channel Enha ncement Mode MOSFET.
HM1404B Key Features
- VDSS=40V／VGSS=±20V／ID=130A RDS(ON)=4mΩ(max.)@VGS=10V
- High Dense Cell Design
- Reliable and Rugged
- Advanced trench process technology
- High Density Cell Design For Ultra Low
- Power Management in Inverter System
- Synchronous Rectification
- Quantity
- +0%