HM8N15K Description
The HM8N15K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
HM8N15K Key Features
- VDS = 150V,ID =A
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Boost converters
- LED backlighting
- Uninterruptible power supply
- Tape width
- Quantity