HAOHAI GM2305
P-Channel MOSFET
FEATURES
●-20V, -3.9A, RDS(ON)=55mΩ @ VGS=-4.5V●High dense cell design for extremely low RDS(ON)
●Rugged and reliable
●Lead free product is acquired
●SOT-23 Package
●Marking Code: A5 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 HPM2305 P-Channel MOSFETs HPM2305 P-Channel Enhancement Mode MOS FETs 对应其他工业型号 SI2305 AO2305 ME2305 GM2305 Internal Block Diagram D HPM2305(SOT-23) D 元件标识(打印) G S SOT-23 内部结构 S G SOT-23 管脚排列
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MAXIMUM RATINGS
最大額定值 Characteristic 特性参数 Drain-Source Voltage 漏极-源极电压 Gate- Source Voltage 栅极-源极电压 Drain Current (continuous) 漏极电流-连续 Drain Current (pulsed) 漏极电流-脉冲 Total Device Dissipation 总耗散功率 TA=25℃ (环境温度为25℃) Junction 结温 Storage Temperature 储存温度 Symbol 符号 BVDSS VGS ID IDM PD Tj Tstg DEVICE MARKING: A5 Max 最大值 -20 ±10 -3.9 -15 1200 150 -55 to +150 Unit 单位 V A mW ℃ HAOHAI ELECTRONICS CO., LTD. 第1页 共4页 致力於中國功率器件優秀供應商 kkg@kkg.com.cn HPM2305_SOT-23 -3.9A,-20V贴片P沟道场效应管 产品参数规格书 HPM2305 P-Channel MOSFETs●
ELECTRICAL CHARACTERISTICS
电特性 (TA=25℃...