H2N60U Datasheet N-channel MOSFET

Manufacturer: HAOHAI

Overview: 2A, 600V, N沟道场效应晶体管产品参数规格书工业型号公司型号通俗命名 H FQU2N60C FQD2N60C H2N60U H2N60D 2N60 HAOHAI 封装标识 U: TO-251 D: TO-252 包装方式条管装卷盘装每管数量 80只/管 2.

Datasheet Details

Part number	H2N60U
Manufacturer	HAOHAI
File Size	395.16 KB
Description	N-Channel MOSFET
Datasheet	H2N60U-HAOHAI.pdf

Key Features

apacitances 　　Excellent Switching Characteristics 　　Unrivalled Gate Charge: 5.5nC(Typ. ) 　　Extended Safe Operating Area 　　Lower RDS(ON): 4.0Ω(Typ. ) @ VGS=10V 　　100% Avalanche Tested 　　Package: TO-251 & TO-252（IPAK & DPAK） ID=1.8A BVDSS=600V RDS(on)=4.0Ω 　.
特点　　导通电阻低,开关速度快,驱动简单,可并联使用,输入阻抗高,符合RoHS规范　.
应用范围　　开关电源、LCD电源、LED驱动电源、机箱电源、UPS电源、　　各种充电器、电子整流器、电子变压器、逆变器、控制器、转换器、　　风扇控制板、以及电源适配器、汽车稳压器等线性放大和功率开关电路　.
封装形式　　TO-251（IPAK）　　TO-252（DPAK） 2N60 Series Pin Assignment 3-Lead Plastic.

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