HP8Q80MC
Description
Passivated high mutation triacs in a plastic envelope intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. These devices will mutate the full rated ms current at the maximum rated junction temperature without the aid of a snubber.
Key Features
- Blocking voltage to 800 V
- 2.0 K/W 2.4 Rth( j-a) Junction to ambient in free air
- 35 mA T2+ G- 2
- 35 mA T2- G- 2
- 35 mA IL Latching current VD=12V; IGT=0.1 A T2+ G+
- 0.7 1.5 0.25 0.4
- 0.1 0.5 mA Dynamic Characteristics dVD/dt Critical rate of rise of VD=67%VDRM gate open;Tj=125℃ 1000 4000
- tgt Gate controlled turn-on time ITM=12A;VD=V ; DRM(max) IG=0.1A;diG/dt=5A/us
