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H01N60 Datasheet N-Channel Power Field Effect Transistor

Manufacturer: HI-SINCERITY

Download the H01N60 datasheet PDF. This datasheet also includes the H01N60-HI variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (H01N60-HI-SINCERITY.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number H01N60
Manufacturer HI-SINCERITY
File Size 57.53 KB
Description N-Channel Power Field Effect Transistor
Datasheet download datasheet H01N60 Datasheet

General Description

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time.

In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes.

The new energy efficient design also offers a drain-to-source diode with a fast recovery time.

Overview

HI-SINCERITY MICROELECTRONICS CORP.

H01N60 Series N-Channel Power Field Effect.

Key Features

  • 1A, 600V, RDS(on)=8Ω@VGS=10V.
  • Low Gate Charge 15nC(Typ. ).
  • Low Crss 4pF(Typ. ).
  • Fast Switching.
  • Improved dv/dt Capability Absolute Maximum Ratings Symbol Parameter VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current (Continuous TC=25oC) Drain Current (Continuous TC=100oC) Drain Current (Pulsed).
  • 1 Gate-Source Voltage Single Pulse Avalanche Energy (L=59mH, IAS=1.1A, VDD=50V, RG=25Ω, Starting TJ=25°C) Avalanche Current.
  • 1 Rep.

More Datasheets from HI-SINCERITY

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