H01N60 Description
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and mutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time.
H01N60 Key Features
- 1A, 600V, RDS(on)=8Ω@VGS=10V
- Low Gate Charge 15nC(Typ.)
- Low Crss 4pF(Typ.)
- Fast Switching
- Improved dv/dt Capability