Datasheet4U Logo Datasheet4U.com

H01N60 - N-Channel Power Field Effect Transistor

This page provides the datasheet information for the H01N60, a member of the H01N60-HI N-Channel Power Field Effect Transistor family.

Datasheet Summary

Description

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time.

In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes.

Features

  • 1A, 600V, RDS(on)=8Ω@VGS=10V.
  • Low Gate Charge 15nC(Typ. ).
  • Low Crss 4pF(Typ. ).
  • Fast Switching.
  • Improved dv/dt Capability Absolute Maximum Ratings Symbol Parameter VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current (Continuous TC=25oC) Drain Current (Continuous TC=100oC) Drain Current (Pulsed).
  • 1 Gate-Source Voltage Single Pulse Avalanche Energy (L=59mH, IAS=1.1A, VDD=50V, RG=25Ω, Starting TJ=25°C) Avalanche Current.
  • 1 Rep.

📥 Download Datasheet

Datasheet preview – H01N60

Datasheet Details

Part number H01N60
Manufacturer HI-SINCERITY
File Size 57.53 KB
Description N-Channel Power Field Effect Transistor
Datasheet download datasheet H01N60 Datasheet
Additional preview pages of the H01N60 datasheet.

📁 Similar Datasheet

Other Datasheets by HI-SINCERITY
  • H01N45A - N-Channel Power Field Effect Transistor

Full PDF Text Transcription

Click to expand full text
HI-SINCERITY MICROELECTRONICS CORP. H01N60 Series N-Channel Power Field Effect Transistor Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and saafety margin against unexpected voltage transients.
Published: |