HSD669AT
HSD669AT is NPN Transistor manufactured by HI-SINCERITY.
- Part of the HSD669AT-HI comparator family.
- Part of the HSD669AT-HI comparator family.
Description
Low frequency power amplifier plementary pair with HSB649A
TO-126
Absolute Maximum Ratings (TA=25°C)
- Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum
- Maximum Power Dissipation Total Power Dissipation (TA=25°C) 1 W Total Power Dissipation (TC=25°C) 20 W
- Maximum Voltages and Currents BVCBO Collector to Base Voltage 180 V BVCEO Collector to Emitter Voltage 160 V BVEBO Emitter to Base Voltage 5 V IC Collector Current (DC) 1.5 A IC Collector Current (Pulse) 3 A
Electrical Characteristics (TA=25°C)
Symbol BVCBO BVCEO BVEBO
ICBO
- VCE(sat) VBE(on)
- h FE1
- h FE2 f T Cob
Min.
Typ.
Max.
- -
- -
- -
- -
- -
- -
- 200
-...