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HSD669AT - NPN Transistor

Download the HSD669AT datasheet PDF. This datasheet also covers the HSD669AT-HI variant, as both devices belong to the same npn transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

Low frequency power amplifier complementary pair with HSB649A TO-126 Absolute Maximum Ratings (TA=25°C) Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (TA=25°C) 1 W Total Power Di

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Note: The manufacturer provides a single datasheet file (HSD669AT-HI-SINCERITY.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HSD669AT
Manufacturer HI-SINCERITY
File Size 89.67 KB
Description NPN Transistor
Datasheet download datasheet HSD669AT Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HI-SINCERITY MICROELECTRONICS CORP. HSD669AT NPN Epitaxial Planar Transistor Spec. No. : H200901 Issued Date : 2009.02.20 Revised Date : Page No. : 1/4 Description Low frequency power amplifier complementary pair with HSB649A TO-126 Absolute Maximum Ratings (TA=25°C) • Maximum Temperatures Storage Temperature .............................................................................................................................................. -55 ~ +150 °C Junction Temperature ...................................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) .............................................................................................