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HSD669A - NPN Transistor

Download the HSD669A datasheet PDF. This datasheet also covers the HSD669A_Hi variant, as both devices belong to the same npn transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

Spec.

No.

: HE6630 Issued Date : 1995.12.18 Revised Date : 2002.05.03 Page No.

Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HSD669A_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HSD669A
Manufacturer Hi-Sincerity Mocroelectronics
File Size 33.47 KB
Description NPN Transistor
Datasheet download datasheet HSD669A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HI-SINCERITY MICROELECTRONICS CORP. HSD669A NPN EPITAXIAL PLANAR TRANSISTOR Description Low frequency power amplifier complementary pair with HSB649A Spec. No. : HE6630 Issued Date : 1995.12.18 Revised Date : 2002.05.03 Page No. : 1/3 Absolute Maximum Ratings (Ta=25°C) TO-126ML • Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature .....................................................................................+150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) ....................................................................................... 1 W Total Power Dissipation (Tc=25°C) .........................................................